PHOTO-ASSISTED EPITAXY OF WURTZITE GAN

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$70,000.00
Award Year:
2002
Program:
SBIR
Phase:
Phase I
Contract:
HQ0006-03-C-0038
Agency Tracking Number:
022-0854
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Astralux, Inc.
2500 Central Ave., Boulder, CO, 80301
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
940915358
Principal Investigator:
Randolph Treece
Vice President, Corporate
(303) 413-1440
rtreece@astraluxinc.com
Business Contact:
Randolph Treece
V.P., Corporate Developme
(303) 413-1440
rtreece@astraluxinc.com
Research Institution:
n/a
Abstract
"This work proposes to develop innovative methods to use photo-assisted epitaxial growth for GaN in order to reduce the defects that limit device performance. Light can interact with the surface of the substrate and nucleation layer to influence the growthtoward greater perfection. Several mechanisms can be investigated where incident illumination has the potential to reduce the defect density. One mechanism is the enhancement of reactant surface mobility by increasing the jump frequency, or decreasingthe potential barrier, and assisting in moving the reactant to the appropriate lattice site. Alternatively, monochromatic light can be resonant with the energy of the forming defects, changing their effective formation energy. A third mechanism to beinvestigated is the effect of using light to change the chemical potential at the surface, which, in turn, effects the energy of formation of charged defects. Astralux is proposing to develop a new GaN growth method that will lead to materials that willrevolutionize discrete wide bandgap semiconductor device fabrication and integrated circuit production. The opportunity for the improved materials will apply to both the next generation of optoelectronic devices, as well as the specialized market nichesfor high-power microwave electronics."

* information listed above is at the time of submission.

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