Combinatorial Approach to Improved P-Type Contacts via Optimal Molecular Doping

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$66,609.00
Award Year:
2002
Program:
STTR
Phase:
Phase I
Contract:
DASG60-02-P-0268
Agency Tracking Number:
02-0056T
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Astralux, Inc.
2500 Central Ave., Boulder, CO, 80301
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
940915358
Principal Investigator:
Randolph Treece
Vice President
(303) 413-1440
rtreece@astraluxinc.com
Business Contact:
Randolph Treece
Vice President
(303) 413-1440
rtreece@astraluxinc.com
Research Institution:
University of Colorado
Bart Van Zeghbroeck
Department of Electrical, and Computer Engineering
Boulder, CO, 80309
(303) 256-2326
Nonprofit college or university
Abstract
"Astralux, Inc. proposes to develop a novel and enabling p-type doping technology for the III-V nitrides with significant applications in the electronic and optoelectronic device arenas. Specifically, we will use molecular doping of magnesium (Mg) andoxygen (O) by ion implantation to improve upon the existing p-type doping technology, with the goal of significantly enhancing the dopant solubility, hole activation and hole mobility. Improved dopant solubility, hole activation and mobility will decreasethe resistivity of the p-doped GaN material. The optimum molecular doping concentrations and material annealing times will be determined by using the combinatorial chemistry approach. The fundamental improvements in p-doping technology, and resultantreduction of resistivity, will not only enable improved contact technology and thereby ease the fabrication of InGaN laser diodes (LDs), but also facilitate commercial development of high power microwave devices such as AlGaN/GaN HBTs. During phase I wewill unambiguously demonstrate the feasibility of the proposed technical approach. In the anticipated Phase II effort we will focus on a commercial HBT fabrication process with device demonstrations for this promising new technology. The Astralux teamincludes experts in wide bandgap materials and devices, as well as combinatorial chemistry. The material improvements expected from the outcome of this research should enable the AlGaN/GaN system to reach its full potential in electronic applications suchas heterojunction bipolar transistors (HBTs) and bibolar junction transistors (BJTs). Furthermore, improved p-type doping technology will lead to increasing the lifetimes of InGaN laser diodes and allow them to operate at lower bias voltages than ispossible today."

* information listed above is at the time of submission.

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