ASTROPOWER, INC.

Company Information

Company Name
ASTROPOWER, INC.
Address
Solar Park
Newark, DE, 19716
Phone
1 302-366-0400
URL
n/a
DUNS
608061883
Number of Employees
30
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$3,286,338.00
54
SBIR Phase II
$11,241,618.00
25
STTR Phase I
$69,955.00
1
Chart code to be here

Award List

  1. GAASP TOP SOLAR CELLS FOR INCREASED SOLAR CONVERSION EFFICIENCY

    Amount: $423,600.00

    GAASP SOLAR CELLS PLACED ON TOP OF CONVENTIONAL SILICON SOLAR CELL ARRAYS CAN INCREASE THE ENERGY CONVERSION EFFICIENCY OF THE SYSTEM AS MUCH AS 100%. ASTROPOWER DIVISION OF ASTROSYSTEMS, INC. PROPOSE ...

    SBIR Phase II 1985 Air ForceDepartment of Defense
  2. OPTICAL COMMUNICATIONS.

    Amount: $40,000.00

    THE GROWTH OF GAAS ON SILICON HAS LONG BEEN RECOGNIZED AS A DESIRABLE APPROACH FOR ADVANCE OPTOELECTRONIC DEVICES INCLUDING OPTICAL INTEGRATED CIRCUITS, OPTICAL COMMUNICATIONBETWEEN CIRCUITS AND AS A ...

    SBIR Phase I 1985 National Science Foundation
  3. MONOLITHIC GAAS LIGHT-EMITTING DIODES ON SILICON VLSI CIRCUITS ELEMENTS

    Amount: $222,417.00

    OPTOELECTRONIC SOURCES, INTEGRATED AS MONOLITHIC ELEMENTS ON SILICON VLSI CHIPS, OFFER IMPORTANT ADVANTAGES IN THE TRANSMISSION OF INFORMATION WITHIN THE CHIP OR BETWEEN CHIPS IN ADVANCED COMPUTER SYS ...

    SBIR Phase II 1987 Defense Advanced Research Projects AgencyDepartment of Defense
  4. HIGH-EFFICIENCY THIN-FILM SILICON-ON-GAP SOLAR CELL FOR IMPROVED RADIATION RESISTANCE

    Amount: $75,000.00

    THE ULTIMATE HIGH-EFFICIENCY CRYSTALLINE SILICON SOLAR CELL DESIGN CONSISTS OF A THIN FILM OF ELECTRICALLY-ACTIVE SILICON EPITAXIALLY GROWN ON AN OXIDE-OVERCOATED, INFRARED-TRANSPARENT GALLIUM PHOSPHI ...

    SBIR Phase II 1987 Air ForceDepartment of Defense
  5. INTEGRATED GAAS EMITTER FOR OPTICAL INTERCONNECTIONS

    Amount: $40,000.00

    THE EFFECT OF SCALING DOWN DEVICE DIMENSIONS OF VLSI STRUCTURES AND THE COMBINATION OF INCREASED CIRCUIT COMPLEXITY DURING THE SCALING PROCESS IS PLACING SEVERE LIMITATIONS ON THE MINIMUM PROPAGATION ...

    SBIR Phase I 1987 National Science Foundation
  6. ELECTRONIC GAAS-ON-SILICON MATERIAL FOR ADVANCED HIGH-SPEED OPTOELECTRONIC DEVICES

    Amount: $475,000.00

    THE SUCCESSFUL GROWTH OF GAAS ON SILICON SUBSTRATES USING DOUBLE SELECTIVE LIQUID EPITAXIAL (DSLE) PROCESS HAS RECENTLY BEEN ACCOMPLISHED. THESE RESULTS SET THE STAGE FOR THE DEVELOPMENT OF AN EXTREME ...

    SBIR Phase II 1988 Missile Defense AgencyDepartment of Defense
  7. GALLIUM ARSENIDE ON SILICON FOR MICROELECTRONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS

    Amount: $224,440.00

    THE GROWTH OF DEVICE QUALITY, LARGE AREA GAAS EPITAXIAL LAYERS ON SILICON SUBSTRATES IS RECOGNIZED AS AN IMPORTANT TECHNOLOGICAL DEVELOPMENT. THE QUALITY OF HETEROEPITAXIAL LAYERS OF GAAS ON SILICON A ...

    SBIR Phase II 1989 National Science Foundation
  8. ALUMINUM-GALLIUM-ARSENIDE TOP SOLAR CELL FOR MECHANICAL ATTACHMENT TO A SILICON CONCENTRATOR WITH IMPROVED AMO EFFICIENCY

    Amount: $300,000.00

    INCREASES IN SOLAR CELL EFFICIENCY CAN BE ACHIEVED WITH TANDEM MULTI-JUNCTION STRUCTURES TO IMPROVE THE PERFORMANCE AND SCALE OF SPACE PHOTOVOLTAIC CONCENTRATORS. THE "TOP SOLAR CELL" TANDEM APPROACH ...

    SBIR Phase II 1990 Missile Defense AgencyDepartment of Defense
  9. HIGH TEMPERATURE SURVIVABLE CONTACTS FOR GALLIUM ARSENIDE SPACE SOLAR CELLS

    Amount: $299,000.00

    EXISTING METALLIC-TYPE CONTACTS ON GALLIUM ARSENIDE (GAAS) HAVE NOT BEEN STABLE AT HIGH TEMPERATURES BECAUSE OF INTERDIFFUSION AND/OR ALLOYING OF THE GAAS TOP LAYER. HIGH TEMPERATURE CONTACTS TO GAAS ...

    SBIR Phase II 1990 Missile Defense AgencyDepartment of Defense
  10. THIN CRYSTALLINE INDIUM-PHOSPHIDE ON INSULATING SUBSTRATES

    Amount: $487,000.00

    UNIFORM LARGE AREA, DEVICE QUALITY INDIUM PHOSPHIDE (INP) EPITAXIAL LAYERS ON INSULATING SUBSTRATES COULD LEAD TO THE DEVELOPMENT OF A NEW GENERATION OF PRODUCIBLE, RADIATION-HARDENED MICROELECTRONIC ...

    SBIR Phase II 1990 Missile Defense AgencyDepartment of Defense

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