ASTROPOWER, INC.

Company Information
Address Solar Park
Newark, DE, 19716


Information

DUNS: 608061883

# of Employees: 30


Ownership Information

HUBZone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. N/A

    Amount: $94,538.00

    N/A

    SBIRPhase I2000National Science Foundation
  2. N/A

    Amount: $69,955.00

    N/A

    STTRPhase I2000Navy Department of Defense
  3. N/A

    Amount: $99,771.00

    N/A

    SBIRPhase I2000Department of Energy
  4. Solution Growth Adapted for Low-BandgapTernary and Quaternary III-V Alloy Bulk Crystals

    Amount: $98,628.00

    N/A

    SBIRPhase I1999Air Force Department of Defense
  5. Mid-infrared avalanche photodiode arrays

    Amount: $69,998.00

    N/A

    SBIRPhase I1999National Aeronautics and Space Administration
  6. N/A

    Amount: $749,249.00

    N/A

    SBIRPhase II1999Department of Energy
  7. Thin (<30 micron) Silicon-Film Solar Cells on Glass-Ceramic Substrates

    Amount: $75,000.00

    50341-98-I Thin (

    SBIRPhase I1998Department of Energy
  8. High Efficiency Floating Junction Gallium Arsenide Solar Cell

    Amount: $600,000.00

    AstroPower proposes to develop a new ultra-thin gallium arsenide solar cell for space applications, that will result in significantly higher performance compared to conventional gallium arsenide and s ...

    SBIRPhase II1997Missile Defense Agency Department of Defense
  9. AlGaAsSb/InGaAsSb on GaSb, Infrared, Separate Absorption and Multiplication, Avalanche Photodiodes

    Amount: $294,896.00

    AstroPower proposes to develop high performance, room temperature, mass-producible, low-cost infrared detectors using liquid-phase heteroepitaxy of lattice-matched InGaAsSb and AlGaAsSb on GaSb substr ...

    SBIRPhase II1997Air Force Department of Defense
  10. Low-Defect GaN Surrogate Substrates by Epitaxial Lateral Overgrowth

    Amount: $60,000.00

    We propose exploratory development of new epitaxial growth technologies for low-defect GiN epitaxial structures and surrogate substrates. A significant feature of our approach is epitaxial latval over ...

    SBIRPhase I1997Missile Defense Agency Department of Defense

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