THIN CRYSTALLINE INDIUM-PHOSPHIDE ON INSULATING SUBSTRATES

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$487,000.00
Award Year:
1990
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
9467
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Astro-systems Inc.*
30 Lovett Ave, Newark, DE, 19711
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
James B Mcneely
(302) 366-0400
Business Contact:
() -
Research Institution:
n/a
Abstract
UNIFORM LARGE AREA, DEVICE QUALITY INDIUM PHOSPHIDE (INP) EPITAXIAL LAYERS ON INSULATING SUBSTRATES COULD LEAD TO THE DEVELOPMENT OF A NEW GENERATION OF PRODUCIBLE, RADIATION-HARDENED MICROELECTRONIC AND OPTOELECTRONIV INTEGRATED CIRCUITS. INP ALLOYS OFFER THE ADVANTAGES OF: PROVEN RESISTANCE TO RADIATION DAMAGE; LOWER SURFACE RECOMBINATION THAN GAAS; HIGH PEAK ELECTRON VELOCITY; AND BANDGAPS THAT MATCH THE LOW-ATTENUATION WINDOW IN SILICA-BASED OPTICAL WAVEGUIDES. IN THIS STUDY, A SIMPLE METHOD OF GROWING CRYSTALLINE INP HETEROLAYERS ON INSULATING SUBSTRATES IS BEING INVESTIGATED. THIS INVESTIGATION APPLIES SOME OF THE TECHNOLOGIES DEVELOPED IN PRODUCING GAAS/SI HETEROSTRUCTURES. THE SUCCESSFUL DEMONSTRATION OF THIS CONCEPT WILL ALLOW THE DEVELOPMENT OF RADIATION-HARD, VLSI MICROELECTRONIC COMPONENTS INCORPORATING INP-ON-INSULATOR TECHNOLOGY. APPLICATIONS FORTHIS TECHNOLOGY INCLUDE NEURAL NETWORK LOGIC AND OPTICAL INTERCONNECT/PROCESSING SCHEMES.

* information listed above is at the time of submission.

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