CONFORMAL HETEROEPITAXY OF GAAS AND INP ON SILICON AND SAPPHIRE SUBSTRATES

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 14272
Amount: $50,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1991
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Astropower
30 Lovett Ave, Newark, DE, 19711
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Michael G. Mauk
 Research Engineer
 () -
Business Contact
Phone: () -
Research Institution
N/A
Abstract
CONFORMAL VAPOR PHASE EPITAXY (CVPE) IS A NEW TECHNIQUE FOR TWO-DIMENSIONAL CONSTRAINED GROWTH OF THIN SEMICONDUCTOR FILMS USING A HALIDE VAPOR TRANSPORT PROCESS. THIS TECHNIQUE WILL BE APPLIED TO THE GROWTH OF GAAS AND INP FILMS ON SILICON AND SAPPHIRE SUBSTRATES. EPITAXIAL-LATERALOVERGROWTH WITH HIGH ASPECT RATIOS IS ACHIEVED BY CONFINING GROWTH TO A THIN VOID SPACE BOUNDED BY AN OXIDE-MASK COATINGTHE SUBSTRATE AND AN ADJACENT OVERHANGING MASK. THIS TECHNIQUE HAS EXCELLENT POTENTIAL FOR REDUCING THE DETRIMENTAL EFFECTS OF LATTICE-MISMATCH AND THERMAL STRESS TO YIELD LOW-DEFECT HETEROEPITAXIAL FILMS. THE FEASIBILITY OF CVPE FOR GAAS-ON-SILICON, GAAS-ON-SAPPHIRE, INP-ON-SILICON, AND INP-ON-SAPPHIRE WILL BE STUDIED WITH EXPERIMENTAL EMPHASIS ON GAAS-ON-SILICON. HETEROEPITAXIAL MATERIAL WILL BE CHARACTERIZED AND MINORITY CARRIER DEVICES,SUCH AS PHOTODETECTORS AND LEDS, FABRICATED WITH THE HETEROEPITAXIAL FILMS, WILL BE EVALUATED.

* information listed above is at the time of submission.

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