CONFORMAL HETEROEPITAXY OF GAAS AND INP ON SILICON AND SAPPHIRE SUBSTRATES

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$50,000.00
Award Year:
1991
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
14272
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Astropower
30 Lovett Ave, Newark, DE, 19711
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Michael G. Mauk
Research Engineer
() -
Business Contact:
() -
Research Institution:
n/a
Abstract
CONFORMAL VAPOR PHASE EPITAXY (CVPE) IS A NEW TECHNIQUE FOR TWO-DIMENSIONAL CONSTRAINED GROWTH OF THIN SEMICONDUCTOR FILMS USING A HALIDE VAPOR TRANSPORT PROCESS. THIS TECHNIQUE WILL BE APPLIED TO THE GROWTH OF GAAS AND INP FILMS ON SILICON AND SAPPHIRE SUBSTRATES. EPITAXIAL-LATERALOVERGROWTH WITH HIGH ASPECT RATIOS IS ACHIEVED BY CONFINING GROWTH TO A THIN VOID SPACE BOUNDED BY AN OXIDE-MASK COATINGTHE SUBSTRATE AND AN ADJACENT OVERHANGING MASK. THIS TECHNIQUE HAS EXCELLENT POTENTIAL FOR REDUCING THE DETRIMENTAL EFFECTS OF LATTICE-MISMATCH AND THERMAL STRESS TO YIELD LOW-DEFECT HETEROEPITAXIAL FILMS. THE FEASIBILITY OF CVPE FOR GAAS-ON-SILICON, GAAS-ON-SAPPHIRE, INP-ON-SILICON, AND INP-ON-SAPPHIRE WILL BE STUDIED WITH EXPERIMENTAL EMPHASIS ON GAAS-ON-SILICON. HETEROEPITAXIAL MATERIAL WILL BE CHARACTERIZED AND MINORITY CARRIER DEVICES,SUCH AS PHOTODETECTORS AND LEDS, FABRICATED WITH THE HETEROEPITAXIAL FILMS, WILL BE EVALUATED.

* information listed above is at the time of submission.

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