(GAP)1-X(ZNS)X:A NEW TUNABLE WIDE-BANDGAP MATERIAL FOR BLUE LIGHT EMITTING DIODES AND DETECTORS OF ULTRAVIOLET RADIATION

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 21575
Amount: $50,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1993
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
Solar Park, Newark, DE, 19716
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Margaret H Hannon
 (302) 366-0400
Business Contact
Phone: () -
Research Institution
N/A
Abstract
THE GROWTH AND DEVELOPMENT OF A (GAP)1-X(ZNS)X-BASED MATERIAL IS BEING ENGINEERED TO PREPARE AN UTEROPOLAR, DIRECT BANDGAP MATERIAL. THIS TYPE OF MATERIAL WITH BANDGAP IN EXCESS OF 2.6 EV CAN BE EMPLOYED IN BLUE LIGHT-EMITTING DIODES, AND IN UV DETECTORS CAPABLE OF SUPERIOR PERFORMANCE COMPARED TO SILICON, IN HIGH TEMPERATURE, HIGH RADIATION ENVIRONMENTS SUCH AS IN EARTH ORBIT AND PARTICLE ACCELERATORS. FOR A BLUE LED, THE DEVELOPMENT OF THIS MATERIAL SYSTEM IS LEADING TO LUMINOUS INTENSITIES OF 80 TO 300 MCD COMPARED TO THE 20 MCD OF CURRENTLY AVAILABLE SIC LEDS. IT IS THE PURPOSE OF THE WORK TO EXPLORE FOR SOLID SOLUTION COMPOSITIONS OF (GAP)1-X(ZNS)X THAT ARE AMPHOTERIC AND CHARACTERIZED BY DIRECT BANDGAPS GREATER THAN 2.6 EV, AND TO DEMONSTRTE EPITAXIAL GROWTH TECHNIQUES WHICH HAVE MANUFACTURING SCALE POTENTIAL.

* Information listed above is at the time of submission. *

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government