LOW-DEFECT SIC MATERIAL BY LIQUID-PHASE EPITAXIAL LATERAL OVERGROWTH

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$734,497.00
Award Year:
1996
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
25575
Agency Tracking Number:
25575
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Solar Park, Newark, DE, 19716
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Michael Mauk
(302) 366-0400
Business Contact:
() -
Research Institute:
n/a
Abstract
We propose a new epitaxial growth technology for low-defect SiC substrates based on metallic solution growth of SiC on silicon and SiC wafers. A significant feature of the our approach is the use of epitaxial lateral overgrowth for "defect filtering." In the Phase I proposal, we present arguments that the proposed technology will lead to SiC material of unprecedented quality with respect to defects and impurities. Improved crystal growth processes will also be possible using reduced growth temperatures, optimized melt compositions, nitrogen doping with ammonia precursors, and rare-earth impurity gettering. The proposed technology will also be developed for dielectric isolation and new device structures which incorporate "buried" metal mirrors and "buried" electrodes.

* information listed above is at the time of submission.

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