LOW-DEFECT SIC MATERIAL BY LIQUID-PHASE EPITAXIAL LATERAL OVERGROWTH

Award Information
Agency:
Department of Defense
Amount:
$734,497.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
1996
Phase:
Phase II
Agency Tracking Number:
25575
Solicitation Topic Code:
N/A
Small Business Information
Astropower, Inc.
Solar Park, Newark, DE, 19716
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Michael Mauk
 (302) 366-0400
Business Contact
Phone: () -
Research Institution
N/A
Abstract
We propose a new epitaxial growth technology for low-defect SiC substrates based on metallic solution growth of SiC on silicon and SiC wafers. A significant feature of the our approach is the use of epitaxial lateral overgrowth for "defect filtering." In the Phase I proposal, we present arguments that the proposed technology will lead to SiC material of unprecedented quality with respect to defects and impurities. Improved crystal growth processes will also be possible using reduced growth temperatures, optimized melt compositions, nitrogen doping with ammonia precursors, and rare-earth impurity gettering. The proposed technology will also be developed for dielectric isolation and new device structures which incorporate "buried" metal mirrors and "buried" electrodes.

* information listed above is at the time of submission.

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