Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N/A
Agency Tracking Number: 25575
Amount: $734,497.00
Phase: Phase II
Program: SBIR
Awards Year: 1996
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Astropower, Inc.
Solar Park, Newark, DE, 19716
Duns: N/A
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Michael Mauk
 (302) 366-0400
Business Contact
Phone: () -
Research Institution
We propose a new epitaxial growth technology for low-defect SiC substrates based on metallic solution growth of SiC on silicon and SiC wafers. A significant feature of the our approach is the use of epitaxial lateral overgrowth for "defect filtering." In the Phase I proposal, we present arguments that the proposed technology will lead to SiC material of unprecedented quality with respect to defects and impurities. Improved crystal growth processes will also be possible using reduced growth temperatures, optimized melt compositions, nitrogen doping with ammonia precursors, and rare-earth impurity gettering. The proposed technology will also be developed for dielectric isolation and new device structures which incorporate "buried" metal mirrors and "buried" electrodes.

* information listed above is at the time of submission.

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