LOW-DEFECT SIC MATERIAL BY LIQUID-PHASE EPITAXIAL LATERAL OVERGROWTH
Department of Defense
Missile Defense Agency
Agency Tracking Number:
Solicitation Topic Code:
Small Business Information
Solar Park, Newark, DE, 19716
Socially and Economically Disadvantaged:
AbstractWe propose a new epitaxial growth technology for low-defect SiC substrates based on metallic solution growth of SiC on silicon and SiC wafers. A significant feature of the our approach is the use of epitaxial lateral overgrowth for "defect filtering." In the Phase I proposal, we present arguments that the proposed technology will lead to SiC material of unprecedented quality with respect to defects and impurities. Improved crystal growth processes will also be possible using reduced growth temperatures, optimized melt compositions, nitrogen doping with ammonia precursors, and rare-earth impurity gettering. The proposed technology will also be developed for dielectric isolation and new device structures which incorporate "buried" metal mirrors and "buried" electrodes.
* information listed above is at the time of submission.