InAsSb/GaSb Infrared Light-Emitting Diodes (LED's)

Award Information
Agency:
Department of Defense
Amount:
$60,000.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Air Force
Award Year:
1994
Phase:
Phase I
Agency Tracking Number:
26169
Solicitation Topic Code:
N/A
Small Business Information
Astropower, Inc.
Solar Park, Neward, DE, 19716
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 James B. Mcneely
 (302) 366-0400
Business Contact
Phone: () -
Research Institution
N/A
Abstract
AstroPower proposes to develop intense, mass-producible, low-cost 4 to 5 micron light-emitting diodes (LED's) using liquid-phase heteroepitaxy of lattice-matched InAsSb on GaSb substrates. The brightest visible LEDs (Ultrabrights) currently available are being produced commercially by the liquid phase heteroepitaxy process using materials with bandgaps in the appropriate visible range for the particular color desired and with matched lattice parameters. Liquid phase epitaxy has routinely provided quality LED and laser devices with the highest electrical-to-optical energy conversion efficiency. Furthermore, the optical design of the proposed IR LED is expected to be enhanced by special reflector and optical design considerations currently under development at AstroPower. This program will produce long life light sources of high solid-state quality -- quality not subject to the poor reliability and fragility of incandescent bulbs. Feasibility of this approach will be domonstrated by deliverable hardware by the end of the Phase I program.

* information listed above is at the time of submission.

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