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NOTE: The Solicitations and topics listed on this site are copies from the various SBIR agency solicitations and are not necessarily the latest and most up-to-date. For this reason, you should visit the respective agency SBIR sites to read the official version of the solicitations and download the appropriate forms and rules.

  1. DMEA122-001: High Speed, High Resolution X-ray System for Inspecting Integrated Circuits

    Release Date: 04-24-2012Open Date: 05-24-2012Due Date: 06-27-2012Close Date: 06-27-2012

    OBJECTIVE: Develop an affordable x-ray microscope system for use in performing integrated circuit (IC) reverse engineering. DESCRIPTION: X-ray microscopy using a synchrotron as the x-ray source has been demonstrated to be an extremely valuable tool in the performance of high throughput integrated circuit evaluation and reverse engineering efforts. However, synchrotron x-ray sources are prohi ...

    SBIRPhase IDepartment of DefenseDefense Microelectronics Activity
  2. DMEA132-001: Miniaturized RF over Fiber

    Release Date: 04-24-2013Open Date: 05-24-2013Due Date: 06-26-2013Close Date: 06-26-2013

    OBJECTIVE: Design and prototype a capability to use fiber optic cable to simultaneously distribute power (i.e power over fiber) while providing full duplex information flow. The capability will allow miniature microwave system components to be distributed over a relatively long distance (i.e. 30 meters or more) via fiber optics. For example, a processing node (within a microwave system) provid ...

    SBIRDepartment of DefenseDefense Microelectronics Activity
  3. DMEA132-002: High Resolution Three-Dimensional Digital Reconstruction of Integrated Circuits

    Release Date: 04-24-2013Open Date: 05-24-2013Due Date: 06-26-2013Close Date: 06-26-2013

    OBJECTIVE: Develop a system for the accurate identification and analysis of semiconductor materials with integrated, high-resolution imaging capability for the three-dimensional digital reconstruction of integrated circuits (ICs). DESCRIPTION: As semiconductor geometries continue to diminish, so too does the applicability of traditional sample preparation tools. As the thickness of metal l ...

    SBIRDepartment of DefenseDefense Microelectronics Activity
  4. DMEA13B-001: Electrochemical Micro-Capacitors Utilizing Carbon Nanostructures

    Release Date: 07-26-2013Open Date: 08-26-2013Due Date: 09-25-2013Close Date: 09-25-2013

    TECHNOLOGY AREAS: Materials/Processes, Electronics The technology within this topic is restricted under the International Traffic in Arms Regulation (ITAR), which controls the export and import of defense-related material and services. Offerors must disclose any proposed use of foreign nationals, their country of origin, and what tasks each would accomplish in the statement of work in accordan ...

    STTRPhase IDepartment of DefenseDefense Microelectronics Activity
  5. DMEA152-001: Rapid Non-destructive Detection of Advanced Counterfeit Electronic Material

    Release Date: 04-24-2015Open Date: 05-22-2015Due Date: 06-24-2015Close Date: 06-24-2015

    Counterfeit and subversively modified electronic components represent a substantial threat to Department of Defense (DoD) systems. Testimony to the Senate Armed Services Committee (SASC) concluded that “the scope and impact of counterfeits is not known … counterfeit electronic parts can compromise performance and reliability, risk national security, and endanger the safety of military personne ...

    SBIRPhase IDepartment of DefenseDefense Microelectronics Activity
  6. DMEA152-002: Analysis of Integrated Circuits Using Limited X-rays

    Release Date: 04-24-2015Open Date: 05-22-2015Due Date: 06-24-2015Close Date: 06-24-2015

    The DARPA TRUST program established the potential usefulness of using an X-Ray microscope to analyze ICs at a synchrotron. We would like to further that development using a lab based X-Ray source. When utilizing a lab X-ray source, acquisition times for X-ray images increase significantly compared to using a synchrotron X-ray source. This is due to the decreased number of X-ray photons (i.e., X-ra ...

    SBIRPhase IDepartment of DefenseDefense Microelectronics Activity
  7. DMEA15B-001: Optimized Scintillator for High Resolution X-ray Imaging at 9keV

    Release Date: 04-24-2015Open Date: 05-26-2015Due Date: 06-24-2015Close Date: 06-24-2015

    Rapid Integrated Circuit (IC) inspection using x-ray microscopy requires novel x-ray scintillating materials with high efficiency and high spatial resolution. Current scintillator materials, such as Cesium Iodide (CsI), suffer from a trade-off between efficiency and spatial resolution. Novel materials with higher stopping power and light yields are necessary to address the stringent requirements o ...

    STTRPhase IDepartment of DefenseDefense Microelectronics Activity
  8. DMEA16B-001: Thickness Measurement Technology for Thin Films on Sapphire Substrate

    Release Date: 04-22-2016Open Date: 05-23-2016Due Date: 06-22-2016Close Date: 06-22-2016

    TECHNOLOGY AREA(S): Electronics, SensorsThe technology within this topic is restricted under the International Traffic in Arms Regulation (ITAR), which controls the export and import of defense-related material and services. Offerors must disclose any proposed use of foreign nationals, their country of origin, and what tasks each would accomplish in the statement of work in accordance with section ...

    STTRPhase IDepartment of DefenseDefense Microelectronics Activity
  9. DMEA162-001: High-brilliance 9keV X-ray Source

    Release Date: 04-22-2016Open Date: 05-23-2016Due Date: 06-22-2016Close Date: 06-22-2016

    TECHNOLOGY AREA(S): Electronics, SensorsOBJECTIVE: Develop a high-flux 9keV x-ray source with a spot size larger than 10umDESCRIPTION: Rapid Integrated Circuit (IC) inspection has become a high priority. X-ray inspection of large volumes of an IC is limited to the high intensity beams at a synchrotron. However, those facilities are not easily accessible for routine inspection of parts. Table-top x ...

    SBIRPhase IDepartment of DefenseDefense Microelectronics Activity
  10. DMEA172-001: Computerized Automatic Delayering and Polishing System

    Release Date: 04-21-2017Open Date: 05-23-2017Due Date: 06-21-2017Close Date: 06-21-2017

    TECHNOLOGY AREA(S): Sensors OBJECTIVE: Develop a tool for automated, procedural delayering and polishing of semiconductor microelectronic devices DESCRIPTION: Sample preparation, in the world of semiconductor microelectronic devices, has proved to be one of the most critical aspects of Failure Analysis (FA), Fault Isolation (FI), and Reverse Engineering (RE). In addition to its criticality, it g ...

    SBIRPhase I/Phase IIDepartment of DefenseDefense Microelectronics Activity
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