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DOE SBIR DE-FOA-0000941 0
NOTE: The Solicitations and topics listed on this site are copies from the various SBIR agency solicitations and are not necessarily the latest and most up-to-date. For this reason, you should use the agency link listed below which will take you directly to the appropriate agency server where you can read the official version of this solicitation and download the appropriate forms and rules.
The official link for this solicitation is: https://arpa-e-foa.energy.gov/
Application Due Date:
Available Funding Topics
Strategies for Wide-Bandgap, Inexpensive Transistors for Controlling High Efficiency Systems (SWITCHES) (SBIR)
This program seeks to fund transformational advances in wide bandgap (WBG) materials, device fabrication, and device architectures. The goal of this program is to enable the development of high voltage (1200V+), high current (100A) single die power semiconductor devices that, upon ultimately reaching scale, would have the potential to reach functional cost parity with silicon power transistors while also offering breakthrough relative circuit performance (low losses, high switching frequencies, and high temperature operation). These transformational technologies would have promise to reduce the barriers to ubiquitous deployment of low-loss WBG power semiconductor devices in stationary and transportation energy applications.